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| Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS 5088 5089 Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25 C Junction temperature Collector-emitter saturation voltage IC = 10 mA; IB = 1 mA D.C. current gain IC = 100 A; VCE = 5 V Transition frequency at f = 20 MHz IC = 500 A; VCE = 5 V *FR-5 Board = 1.0 x 0.75 x 0.062 in. VCB0 VCE0 IC Ptot* Tj VCEsat hFE max. max. max. max. max. max. 35 30 50 225 150 0.5 30 V 25 V mA mW C V 400 1200 min. 300 max. 900 min. 50 fT MHz Continental Device India Limited Data Sheet Page 1 of 3 RATINGS (at TA = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VCBO Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (d.c.) IC Ptot* Total power dissipation up to Tamb = 25 C Storage temperature Tstg Junction temperature Tj THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tamb = 25 C unless otherwise specified Collector cut-off current IE = 0; VCB = 20 V IE = 0; VCB = 15V Emitter cut-off current IC = 0; VEB = 3 V IC = 0; VEB = 4.5V Saturation voltages IC = 10 mA; IB = 1 mA Collector capacitance at f = 100 KHz Emitter guarded IE = 0; VCB = 5V Emitter capacitance at f = 100 KHz Emitter guarded IC = 0; VEB = 0.5V D.C. current gain IC = 0.1 A; VCE = 5 V IC = 1.0 mA; VCE = 5 V IC = 10 mA; VCE = 5 V Small signal current gain IC = 1 mA; VCE = 5V; f = 1 KHz Transition frequency at f = 20 MHz IC = 500 A; VCE = 5 V Noise figure at RS = 10 k IC = 100 A; VCE = 5 V f = 10 Hz to 15.7 Hz *FR-5 Board = 1.0 x 0.75 x 0.62 in. 5088 5089 max. max. max. max. max. max. 35 30 30 V 25 V 4.5 V 50 mA 225 mW -55 to +150 C 150 C Rth j-a 417 C/W 5088 5089 ICBO < < < < < < 50 - 50 - 500 800 - nA 50 nA - nA 100 nA mV mV IEBO VCEsat VBEsat Ccb < 4.0 pF C eb hFE hFE hFE hfe fT NF < 300-900 350 300 350-1400 > < 3.0 10 pF 400-1200 450 400 450-1800 > > 50 MHz 2.0 dB Continental Device India Limited Data Sheet Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3 |
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